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TEMT1000
Vishay Telefunken
Silicon NPN Phototransistor
Description
TEMT1000 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in SMT package with dome lens. Due to its integrated Daylight filter the device is sensitive for IR radiation only. High on axis sensitivity is provided by a viewing angle of 15.
Features
D D D D D
Fast response times
15 970
High photo sensitivity Angle of half sensitivity = 15 Daylight filter matched for near IR radiation SMD with terminals Z-bend
Applications
Detector in electronic control and drive circuits IR Detector for Daylight application
Absolute Maximum Ratings
Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Soldering Temperature Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tamb Tsd Value 70 5 50 100 100 100 -40...+85 -40...+85 260 Unit V V mA mA mW C C C C
tp/T = 0.5, tp 10 ms Tamb 55 C
x
x
t
x 3 s, 2 mm from case
Document Number 81554 Rev. 4, 17-Feb-00
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TEMT1000
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Symbol V(BR)CE
O
Min 70
Typ
Max
Unit V nA pF deg nm nm V
ICEO CCEO
l = 950 nm, IC = 0.1 mA
VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W
Ee = 1 mW/cm2,
lp l0.5
ton toff fc
1 3 15 850 750...980
200
VCEsat 2.0 2.3 180
0.3
ms ms
kHz
Type Dedicated Characteristics
Tamb = 25_C Parameter Test Conditions Collector Light Current Ee=1mW/cm2, l=950nm, VCE=5V Type TEMT1000 Symbol Ica Min 2.0 Typ 7.0 Max Unit mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104 I CEO - Collector Dark Current ( nA ) I ca rel - Relative Collector Current 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 20
94 8304
103 VCE=20V 102
VCE=5V Ee=1mW/cm2
l=950nm
101
100 40 60 80 100
94 8239
0
20
40
60
80
100
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 1. Collector Dark Current vs. Ambient Temperature
Figure 2. Relative Collector Current vs. Ambient Temperature
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Document Number 81554 Rev. 4, 17-Feb-00
TEMT1000
Vishay Telefunken
C CEO - Collector Emitter Capacitance ( pF ) t on / t off - Turn on / Turn off Time ( m s ) 10 8 f=1MHz 8 VCE=5V RL=100W
6
6
l=950nm
4 toff ton 0 0 2 4 6 8 10 12 14
4
2 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V )
2
94 8294
94 8293
IC - Collector Current ( mA )
Figure 3. Collector Emitter Capacitance vs. Collector Emitter Voltage
0 10 20 30
Figure 5. Turn On/Turn Off Time vs. Collector Current
S rel - Relative Sensitivity
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
94 8248
Figure 4. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81554 Rev. 4, 17-Feb-00
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TEMT1000
Vishay Telefunken Dimensions in mm
16104
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Document Number 81554 Rev. 4, 17-Feb-00
TEMT1000
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81554 Rev. 4, 17-Feb-00
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